Product Details
| Transistor Polarity : |
N-Channel |
| Technology : |
GaAs |
| Product Category : |
RF JFET Transistors |
| Mounting Style : |
SMD/SMT |
| Gain : |
17.7 dB |
| Transistor Type : |
EpHEMT |
| Pd - Power Dissipation : |
270 mW |
| Package / Case : |
SOT-343 |
| Maximum Operating Temperature : |
+ 150 C |
| Vds - Drain-Source Breakdown Voltage : |
5 V |
| Packaging : |
Reel |
| Id - Continuous Drain Current : |
100 mA |
| Vgs - Gate-Source Breakdown Voltage : |
- 5 V to 1 V |
| Manufacturer : |
Avago / Broadcom |
| Description: |
RF JFET Transistors Transistor GaAs Single Voltage |
Description
The ATF-55143-TR1G,from Avago / Broadcom,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and ...
